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| PD - 93967 PROVISIONAL IRLML5203 HEXFET(R) Power MOSFET RDS(on) max (m) ) 98@VGS = -10V 165@VGS = -4.5V l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -30V ID -3.0A -2.6A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. G1 3D 2 S Micro3TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -3.0 -2.4 -24 1.25 0.80 10 20 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 100 Units C/W www.irf.com 1 8/28/00 IRLML5203 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance PROVISIONAL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 --- --- --- -1.0 3.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.019 --- --- --- --- --- --- --- --- 9.5 2.3 1.6 12 18 88 52 510 71 43 Max. Units Conditions --- V V GS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 98 VGS = -10V, ID = -3.0A m 165 VGS = -4.5V, ID = -2.6A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.0A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 14 ID = -3.0A 3.5 nC VDS = -24V 2.4 VGS = -10V --- VDD = -15V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 17 12 -1.3 A -24 -1.2 26 18 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, I F = -1.3A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com PROVISIONAL IRLML5203 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 100 10 1 -2.70V 0.1 1 -2.70V 20s PULSE WIDTH TJ = 150 C 1 10 100 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 3.0A R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 10 TJ = 150 C 1 1.0 TJ = 25 C V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.5 0.1 2.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML5203 800 PROVISIONAL 20 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID = -3.0A VDS = -24V VDS = -15V 16 C, Capacitance (pF) 600 Ciss 12 400 8 200 4 Coss Crss 0 1 10 100 0 0 4 8 12 16 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) -ID , Drain Current (A) I 10 10 10us TJ = 150 C 100us 1 1 1ms TJ = 25 C TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 0.1 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com PROVISIONAL IRLML5203 VDS VGS RD 3.0 D.U.T. + -ID , Drain Current (A) 2.0 VGS Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 P DM t1 t2 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - RG VDD 5 IRLML5203 R DS(on) , Drain-to -Source On Resistance ( ) 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 14.0 PROVISIONAL R DS (on) , Drain-to-Source On Resistance ( ) 0.40 0.30 0.20 VGS = -4.5V ID = -3.0A 0.10 VGS = -10V 0.00 0 4 8 12 16 -I D , Drain Current (A) 16.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS PROVISIONAL IRLML5203 2.5 30 -V GS(th) , Variace ( V ) 20 2.0 Power (W) 10 0 0.001 ID = -250A 1.5 -75 -50 -25 0 25 50 75 100 125 150 0.010 0.100 1.000 10.000 100.000 T J , Temperature ( C ) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 7 IRLML5203 Micro3TM Package Outline Dimensions are shown in millimeters (inches) D -B3 PROVISIONAL L E A D A S SIG N M E N T S 1 - G A TE 2 - SOUR CE 3 - D R A IN H 2 0.20 ( .008 ) M AM D IM A A1 B C D e e1 IN C H E S M IN .03 2 .00 1 .01 5 .004 .105 M AX .04 4 .00 4 .02 1 .006 .120 M ILL IM ET E R S MIN 0.82 0.02 0.38 0 .1 0 2 .6 7 MAX 1 .11 0 .10 0 .54 0.15 3.05 3 E -A- 3 1 .07 50 B AS IC .03 75 B AS IC .04 7 .083 .00 5 0 .055 .098 .010 8 1 .90 B A SIC 0.95 B AS IC 1.20 2 .1 0 0.13 0 1 .40 2.50 0 .2 5 8 e e1 0.008 (.00 3) L 3X C 3X E H L A -C B 3X 0.10 (.004) M A1 C AS B S M IN IM U M R E C O M M EN D E D FO O T PR IN T 0 .8 0 ( .031 ) 3X 0 .9 0 ( .0 35 ) 3X 2.00 ( .079 ) N OTES: 1 . D IM EN SIO N IN G & T O L ER A N C IN G PE R A N S I Y14.5M -198 2. 2 . C O N TR O L LIN G D IM E N S IO N : IN C H . 3 D IM EN SIO N S D O N O T IN C LU D E M O L D FL A SH . 0.95 ( .037 ) 2X Micro3TM Part Marking Information EXAMPLE: THIS IS AN IRLML6302 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D 1C YW DATE CODE PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETTER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D DATE CODE EXAMPLES : YWW = 9503 = 5C YWW = 9532 = EF 50 51 52 X Y Z 8 www.irf.com PROVISIONAL IRLML5203 Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 8mm 4mm NOTES : FEED DIRECTION 1. OUT LINE CONFORMS T O EIA-481 & EIA-541. O 7" 8mm NOT ES : 1. OUT LINE CONFORMS T O EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 www.irf.com 9 |
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